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Characteristics of SiOX thin films deposited by atmospheric pressure chemical vapor deposition using a double-discharge system
Characteristics of SiOX thin films deposited by atmospheric pressure chemical vapor deposition using a double-discharge system
Characteristics of SiOX thin films deposited by atmospheric pressure chemical vapor deposition using a double-discharge system
Park, J. (author) / Oh, J. (author) / Gil, E. (author) / Yeom, G.Y. (author) / Boo, J.-H. / Ahn, H.
2012-01-01
4 pages
Article (Journal)
English
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