Thermal stability of atomic-layer-deposited ultra-thin niobium oxide film on Si (100)

Huang, Y. / Xu, Y. / Ding, S. J. et al. | British Library Online Contents | 2011

Electrical conduction mechanisms and dielectric relaxation in Al2O3 thin films deposited by thermal atomic layer deposition

Altuntas, Halit / Kaplan, Kemal | British Library Online Contents | 2018

Effect of interface layer on growth behavior of atomic-layer-deposited Ir thin film as novel Cu diffusion barrier

Choi, B. H. / Lee, J. H. / Lee, H. K. et al. | British Library Online Contents | 2011

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

Wu, Y. Q. / Ye, P. D. / Wilk, G. D. et al. | British Library Online Contents | 2006

Characteristics of ZrO~2/Al~2O~3 Bilayer Film for Gate Dielectric Applications Deposited by Atomic Layer Deposition Method

Kim, Y. D. / Lee, J. H. / Koo, J. H. et al. | British Library Online Contents | 2004