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Study of the La-related dipole in TiN/LaOx/HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering
Study of the La-related dipole in TiN/LaOx/HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering
Study of the La-related dipole in TiN/LaOx/HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering
Boujamaa, R. (Autor:in) / Martinez, E. (Autor:in) / Pierre, F. (Autor:in) / Renault, O. (Autor:in) / Detlefs, B. (Autor:in) / Zegenhagen, J. (Autor:in) / Baudot, S. (Autor:in) / Gros-Jean, M. (Autor:in) / Bertin, F. (Autor:in) / Dubourdieu, C. (Autor:in)
APPLIED SURFACE SCIENCE ; 335 ; 71-77
01.01.2015
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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British Library Online Contents | 2011
|British Library Online Contents | 2011
|Depth profiles of boron and nitrogen in SiON films by backside SIMS
British Library Online Contents | 2004
|Quantification of nitrogen profiles in HfSiON films for gate dielectrics
British Library Online Contents | 2004
|Luminescence properties of LaOX (X = F, Cl, Br)Eu phosphors
British Library Online Contents | 2003
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