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Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation
Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation
Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation
Kim, S. H. (Autor:in) / Seok, T. J. (Autor:in) / Jin, H. S. (Autor:in) / Kim, W. B. (Autor:in) / Park, T. J. (Autor:in)
APPLIED SURFACE SCIENCE ; 365 ; 376-379
01.01.2016
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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