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Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation
Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation
Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation
Kim, Seung Hyun (Autor:in) / Seok, Tae Jun (Autor:in) / Jin, Hyun Soo (Autor:in) / Kim, Woo-Byoung (Autor:in) / Park, Tae Joo (Autor:in)
Applied surface science ; 365 ; 376-379
01.01.2016
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
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