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Deposition temperature dependent optical and electrical properties of ALD HfO2 gate dielectrics pretreated with tetrakisethylmethylamino hafnium
Deposition temperature dependent optical and electrical properties of ALD HfO2 gate dielectrics pretreated with tetrakisethylmethylamino hafnium
Deposition temperature dependent optical and electrical properties of ALD HfO2 gate dielectrics pretreated with tetrakisethylmethylamino hafnium
Gao, J. (Autor:in) / He, G. (Autor:in) / Zhang, J.W. (Autor:in) / Liu, Y.M. (Autor:in) / Sun, Z.Q. (Autor:in)
Materials research bulletin ; 70 ; 840-846
01.01.2015
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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