Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Structural and optical properties of nitrogen-incorporated HfO2 gate dielectrics deposited by reactive sputtering
Structural and optical properties of nitrogen-incorporated HfO2 gate dielectrics deposited by reactive sputtering
Structural and optical properties of nitrogen-incorporated HfO2 gate dielectrics deposited by reactive sputtering
He, G. (Autor:in) / Fang, Q. (Autor:in) / Li, G. H. (Autor:in) / Zhang, J. P. (Autor:in) / Zhang, L. D. (Autor:in)
APPLIED SURFACE SCIENCE ; 253 ; 8483-8488
01.01.2007
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2013
|British Library Online Contents | 2015
|Electrical and structural characterization of PLD grown CeO2-HfO2 laminated high-k gate dielectrics
British Library Online Contents | 2006
|Atomic layer deposition of CeO2/HfO2 gate dielectrics on Ge substrate
British Library Online Contents | 2014
|Ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructure
British Library Online Contents | 2004
|