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Investigation of c-Si surface passivation using thermal ALD deposited HfO2 films
Investigation of c-Si surface passivation using thermal ALD deposited HfO2 films
Investigation of c-Si surface passivation using thermal ALD deposited HfO2 films
Gougam, Adel B. (Autor:in) / Rajab, Bilal (Autor:in) / Bin Afif, Abdulla (Autor:in)
Materials science in semiconductor processing ; 95 ; 42-47
01.01.2019
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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