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    Investigation of c-Si surface passivation using thermal ALD deposited HfO2 films

    New search for: Gougam, Adel B.
    New search for: Rajab, Bilal
    New search for: Bin Afif, Abdulla

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    Investigation of c-Si surface passivation using thermal ALD deposited HfO2 films

    New search for: Gougam, Adel B.
    New search for: Rajab, Bilal
    New search for: Bin Afif, Abdulla

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Investigation of c-Si surface passivation using thermal ALD deposited HfO2 films

    New search for: Gougam, Adel B.
    New search for: Rajab, Bilal
    New search for: Bin Afif, Abdulla

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Investigation of c-Si surface passivation using thermal ALD deposited HfO2 films

    Contributors:

    Gougam, Adel B. (author) / Rajab, Bilal (author) / Bin Afif, Abdulla (author)

    Published in:

    Materials science in semiconductor processing ; 95 ; 42-47

    Publication date:

    2019-01-01

    Size:

    6 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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