Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
OXIDE SEMICONDUCTOR THIN FILM OF THIN FILM TRANSISTOR, THIN FILM TRANSISTOR AND SPUTTERING TARGET
PROBLEM TO BE SOLVED: To provide an oxide semiconductor thin film of a shin film transistor, which has excellent wet etching resistance, in particular, at the time of performing patterning on source/drain electrode formed on the oxide semiconductor thin film, reduction in film thickness is suppressed and surface roughness is suppressed even when the oxide semiconductor thin film is immersed in an acid-based etchant such as an inorganic acid-based etchant and a hydrogen peroxide-based etchant.SOLUTION: An oxide semiconductor thin film of a thin film transistor, which is used for a semiconductor layer, the oxide semiconductor film of the thin film transistor is composed of an oxide made up of In, Ga and Sn as metal elements and O; and respective ratios of the number of atoms satisfy 0.30≤In/(In+Ga+Sn)≤0.50, 0.20≤Ga/(In+Ga+Sn)≤0.30 and 0.25≤Sn/(In+Ga+Sn)≤0.45; and a ratio Sn/In of the number of atoms of Sn and In is equal to or higher than 0.50.SELECTED DRAWING: None
【課題】薄膜トランジスタの酸化物半導体薄膜であって、優れたウェットエッチング耐性、具体的には、上記酸化物半導体薄膜の上に形成されるソース・ドレイン電極のパターニング時に、無機酸系や過酸化水素系の酸系エッチング液に浸漬させても、膜減りが抑えられ、表面荒れの抑えられた酸化物半導体薄膜を提供する。【解決手段】薄膜トランジスタの、前記半導体層に用いられる酸化物半導体薄膜であって、金属元素としてＩｎ、ＧａおよびＳｎと；Ｏと；で構成される酸化物からなり、該Ｉｎ、Ｇａ、Ｓｎの各原子数比がそれぞれ、０．３０≦Ｉｎ／（Ｉｎ＋Ｇａ＋Ｓｎ）≦０．５０、０．２０≦Ｇａ／（Ｉｎ＋Ｇａ＋Ｓｎ）≦０．３０、０．２５≦Ｓｎ／（Ｉｎ＋Ｇａ＋Ｓｎ）≦０．４５を満たし、かつ前記ＳｎとＩｎの原子数比であるＳｎ／Ｉｎが０．５０以上である薄膜トランジスタの酸化物半導体薄膜。【選択図】なし
OXIDE SEMICONDUCTOR THIN FILM OF THIN FILM TRANSISTOR, THIN FILM TRANSISTOR AND SPUTTERING TARGET
PROBLEM TO BE SOLVED: To provide an oxide semiconductor thin film of a shin film transistor, which has excellent wet etching resistance, in particular, at the time of performing patterning on source/drain electrode formed on the oxide semiconductor thin film, reduction in film thickness is suppressed and surface roughness is suppressed even when the oxide semiconductor thin film is immersed in an acid-based etchant such as an inorganic acid-based etchant and a hydrogen peroxide-based etchant.SOLUTION: An oxide semiconductor thin film of a thin film transistor, which is used for a semiconductor layer, the oxide semiconductor film of the thin film transistor is composed of an oxide made up of In, Ga and Sn as metal elements and O; and respective ratios of the number of atoms satisfy 0.30≤In/(In+Ga+Sn)≤0.50, 0.20≤Ga/(In+Ga+Sn)≤0.30 and 0.25≤Sn/(In+Ga+Sn)≤0.45; and a ratio Sn/In of the number of atoms of Sn and In is equal to or higher than 0.50.SELECTED DRAWING: None
【課題】薄膜トランジスタの酸化物半導体薄膜であって、優れたウェットエッチング耐性、具体的には、上記酸化物半導体薄膜の上に形成されるソース・ドレイン電極のパターニング時に、無機酸系や過酸化水素系の酸系エッチング液に浸漬させても、膜減りが抑えられ、表面荒れの抑えられた酸化物半導体薄膜を提供する。【解決手段】薄膜トランジスタの、前記半導体層に用いられる酸化物半導体薄膜であって、金属元素としてＩｎ、ＧａおよびＳｎと；Ｏと；で構成される酸化物からなり、該Ｉｎ、Ｇａ、Ｓｎの各原子数比がそれぞれ、０．３０≦Ｉｎ／（Ｉｎ＋Ｇａ＋Ｓｎ）≦０．５０、０．２０≦Ｇａ／（Ｉｎ＋Ｇａ＋Ｓｎ）≦０．３０、０．２５≦Ｓｎ／（Ｉｎ＋Ｇａ＋Ｓｎ）≦０．４５を満たし、かつ前記ＳｎとＩｎの原子数比であるＳｎ／Ｉｎが０．５０以上である薄膜トランジスタの酸化物半導体薄膜。【選択図】なし
OXIDE SEMICONDUCTOR THIN FILM OF THIN FILM TRANSISTOR, THIN FILM TRANSISTOR AND SPUTTERING TARGET
薄膜トランジスタの酸化物半導体薄膜、薄膜トランジスタ、およびスパッタリングターゲット
OCHI MOTOTAKA (Autor:in) / MORITA SHINYA (Autor:in) / MIKI AYA (Autor:in) / GOTO YASUSHI (Autor:in)
14.04.2016
Patent
Elektronische Ressource
Japanisch
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