Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR INCLUDING THE OXIDE SEMICONDUCTOR THIN FILM
PROBLEM TO BE SOLVED: To provide a sputtering target for an oxide semiconductor having high density and low resistance.SOLUTION: A sputtering target is consisting of oxides containing an indium element (In), a gallium element (Ga), a zinc element (Zn) and an aluminum element (Al), in which the sputtering target contains a bixbyite structure compound represented by InO, a homologous structure compound represented by InGaO(ZnO)or InAlO(ZnO)(m is 0.1-10), and a spinel structure compound represented by ZnAlOor ZnGaO.SELECTED DRAWING: None
【課題】高密度かつ低抵抗の酸化物半導体用スパッタリングターゲットを提供する。【解決手段】インジウム元素（Ｉｎ）、ガリウム元素（Ｇａ）、亜鉛元素（Ｚｎ）及びアルミニウム元素（Ａｌ）を含有する酸化物からなり、Ｉｎ２Ｏ３で表されるビックスバイト構造化合物と、ＩｎＧａＯ３（ＺｎＯ）ｍ又はＩｎＡｌＯ３（ＺｎＯ）ｍ（ｍは０．１〜１０）で表されるホモロガス構造化合物と、ＺｎＡｌ２Ｏ４又はＺｎＧａ２Ｏ４で表されるスピネル構造化合物を含むスパッタリングターゲット。【選択図】なし
SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR INCLUDING THE OXIDE SEMICONDUCTOR THIN FILM
PROBLEM TO BE SOLVED: To provide a sputtering target for an oxide semiconductor having high density and low resistance.SOLUTION: A sputtering target is consisting of oxides containing an indium element (In), a gallium element (Ga), a zinc element (Zn) and an aluminum element (Al), in which the sputtering target contains a bixbyite structure compound represented by InO, a homologous structure compound represented by InGaO(ZnO)or InAlO(ZnO)(m is 0.1-10), and a spinel structure compound represented by ZnAlOor ZnGaO.SELECTED DRAWING: None
【課題】高密度かつ低抵抗の酸化物半導体用スパッタリングターゲットを提供する。【解決手段】インジウム元素（Ｉｎ）、ガリウム元素（Ｇａ）、亜鉛元素（Ｚｎ）及びアルミニウム元素（Ａｌ）を含有する酸化物からなり、Ｉｎ２Ｏ３で表されるビックスバイト構造化合物と、ＩｎＧａＯ３（ＺｎＯ）ｍ又はＩｎＡｌＯ３（ＺｎＯ）ｍ（ｍは０．１〜１０）で表されるホモロガス構造化合物と、ＺｎＡｌ２Ｏ４又はＺｎＧａ２Ｏ４で表されるスピネル構造化合物を含むスパッタリングターゲット。【選択図】なし
SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR INCLUDING THE OXIDE SEMICONDUCTOR THIN FILM
スパッタリングターゲット、酸化物半導体薄膜及び当該酸化物半導体薄膜を備える薄膜トランジスタ
TAJIMA NOZOMI (Autor:in) / EBATA KAZUAKI (Autor:in)
25.10.2018
Patent
Elektronische Ressource
Japanisch
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