Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation technology and application of high-purity silicon nitride nano powder
The invention aims to provide a preparation method and an application method of high-purity and multipurpose silicon nitride nano powder, which are characterized by comprising the following steps of: producing a silicon diimide intermediate of high-grade silicon nitride from ammonia and organic amino silane or silicon tetrachloride in a vertically arranged reaction container at the temperature of between 50 and 300 DEG C; the amorphous silicon nitride is then converted into an amorphous silicon nitride powder at 900 DEG C in a continuous sintering furnace, and the amorphous powder is continuously converted into a high-purity nanocrystal silicon nitride powder at a temperature of 1350-1800 DEG C in which at least 90% of the a-Si3N4 phase flows the amorphous Si-N (H)-based compound synthesized therein. In the reaction process, impurities such as ammonia chloride and the like in the reaction process are extracted by adopting supercritical ammonia to obtain high-purity amorphous silicon nitride powder, and then the amorphous silicon nitride powder is converted into crystalline silicon carbide in a nitrogen-containing inert gas atmosphere or an ammonia-containing reducing gas atmosphere. The nano powder can be used for producing a silicon nitride sintered body under different sintering conditions, and can be used as a high-thermal-conductivity circuit upper substrate, or can be applied to a release agent of a casting mould for casting a polycrystalline silicon ingot.
本发明的目的是提供一种高纯度、多用途的氮化硅纳米粉制备方法和应用方法，其特征在于是通过氨与有机氨基硅烷、或者四氯化硅在50℃‑300℃，在一个垂直排列的反应容器中，生产成高级氮化硅的硅二酰亚胺中间体，然后在连续烧结炉在900℃情况转化为非晶态氮化硅粉末，继续在1350～1800℃的温度下，将非晶粉末转化为高纯纳米晶体氮化硅粉末，其中包括至少90％的a‑Si3N4相使在里合成的非晶质Si‑N(H)系化合物流动。该反应过程中首先采用超临界氨对反应过程中杂质氯化氨等进行萃取，得到高纯无定形氮化硅粉末，随后在含氮惰性气体气氛下或含氨还原性气体气氛下，将无定形氮化硅粉末转化为晶体形碳化硅。该纳米粉可以在不同烧结条件生产氮化硅烧结体并用高导热型电路上基板，或者应用于多晶硅锭铸造用铸模的脱模剂。
Preparation technology and application of high-purity silicon nitride nano powder
The invention aims to provide a preparation method and an application method of high-purity and multipurpose silicon nitride nano powder, which are characterized by comprising the following steps of: producing a silicon diimide intermediate of high-grade silicon nitride from ammonia and organic amino silane or silicon tetrachloride in a vertically arranged reaction container at the temperature of between 50 and 300 DEG C; the amorphous silicon nitride is then converted into an amorphous silicon nitride powder at 900 DEG C in a continuous sintering furnace, and the amorphous powder is continuously converted into a high-purity nanocrystal silicon nitride powder at a temperature of 1350-1800 DEG C in which at least 90% of the a-Si3N4 phase flows the amorphous Si-N (H)-based compound synthesized therein. In the reaction process, impurities such as ammonia chloride and the like in the reaction process are extracted by adopting supercritical ammonia to obtain high-purity amorphous silicon nitride powder, and then the amorphous silicon nitride powder is converted into crystalline silicon carbide in a nitrogen-containing inert gas atmosphere or an ammonia-containing reducing gas atmosphere. The nano powder can be used for producing a silicon nitride sintered body under different sintering conditions, and can be used as a high-thermal-conductivity circuit upper substrate, or can be applied to a release agent of a casting mould for casting a polycrystalline silicon ingot.
本发明的目的是提供一种高纯度、多用途的氮化硅纳米粉制备方法和应用方法，其特征在于是通过氨与有机氨基硅烷、或者四氯化硅在50℃‑300℃，在一个垂直排列的反应容器中，生产成高级氮化硅的硅二酰亚胺中间体，然后在连续烧结炉在900℃情况转化为非晶态氮化硅粉末，继续在1350～1800℃的温度下，将非晶粉末转化为高纯纳米晶体氮化硅粉末，其中包括至少90％的a‑Si3N4相使在里合成的非晶质Si‑N(H)系化合物流动。该反应过程中首先采用超临界氨对反应过程中杂质氯化氨等进行萃取，得到高纯无定形氮化硅粉末，随后在含氮惰性气体气氛下或含氨还原性气体气氛下，将无定形氮化硅粉末转化为晶体形碳化硅。该纳米粉可以在不同烧结条件生产氮化硅烧结体并用高导热型电路上基板，或者应用于多晶硅锭铸造用铸模的脱模剂。
Preparation technology and application of high-purity silicon nitride nano powder
高纯氮化硅纳米粉制备技术及应用
ZHOU XIDONG (Autor:in) / LIU LANYING (Autor:in)
27.12.2022
Patent
Elektronische Ressource
Chinesisch
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