Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
High-mobility indium oxide-based target material as well as preparation method and application thereof
The invention belongs to the technical field of targets for photovoltaic cells, and particularly discloses a high-mobility indium oxide-based target as well as a preparation method and application thereof. The preparation raw materials of the indium oxide-based target material comprise indium oxide, an X oxide, a Y oxide and a Z oxide, wherein the X oxide comprises at least one of Y2O3, Dy2O3 and Gd2O3; the Y oxide comprises at least one of B2O3 and Bi2O3; and the Z oxide comprises at least one of Ta2O5, MoO3 and WO3. The indium oxide-based target material is relatively low in highest sintering temperature and relatively high in density, and the indium oxide-based target material which is high in density and relatively low in grain size is obtained under relatively low doping amount and sintering temperature. The TCO film obtained by coating the indium oxide-based target material has high light transmittance and high carrier mobility, can be used for an HJT battery, and improves the photoelectric conversion efficiency.
本发明属于光伏电池用靶材技术领域，具体公开了一种高迁移率的氧化铟基靶材及其制备方法和应用。本发明的氧化铟基靶材制备原料包括氧化铟、X氧化物、Y氧化物和Z氧化物；其中，X氧化物包括Y2O3、Dy2O3和Gd2O3中的至少一种；Y氧化物包括B2O3和Bi2O3中的至少一种；Z氧化物包括Ta2O5、MoO3和WO3中的至少一种。该氧化铟基靶材最高烧结温度较低，致密度较高，本发明实现了在较低的掺杂量和烧结温度下，获得高致密且晶粒尺寸较低的氧化铟基靶材。使用该氧化铟基靶材镀膜得到TCO薄膜，具有高透光率和高载流子迁移率，可用于HJT电池，提高光电转化效率。
High-mobility indium oxide-based target material as well as preparation method and application thereof
The invention belongs to the technical field of targets for photovoltaic cells, and particularly discloses a high-mobility indium oxide-based target as well as a preparation method and application thereof. The preparation raw materials of the indium oxide-based target material comprise indium oxide, an X oxide, a Y oxide and a Z oxide, wherein the X oxide comprises at least one of Y2O3, Dy2O3 and Gd2O3; the Y oxide comprises at least one of B2O3 and Bi2O3; and the Z oxide comprises at least one of Ta2O5, MoO3 and WO3. The indium oxide-based target material is relatively low in highest sintering temperature and relatively high in density, and the indium oxide-based target material which is high in density and relatively low in grain size is obtained under relatively low doping amount and sintering temperature. The TCO film obtained by coating the indium oxide-based target material has high light transmittance and high carrier mobility, can be used for an HJT battery, and improves the photoelectric conversion efficiency.
本发明属于光伏电池用靶材技术领域，具体公开了一种高迁移率的氧化铟基靶材及其制备方法和应用。本发明的氧化铟基靶材制备原料包括氧化铟、X氧化物、Y氧化物和Z氧化物；其中，X氧化物包括Y2O3、Dy2O3和Gd2O3中的至少一种；Y氧化物包括B2O3和Bi2O3中的至少一种；Z氧化物包括Ta2O5、MoO3和WO3中的至少一种。该氧化铟基靶材最高烧结温度较低，致密度较高，本发明实现了在较低的掺杂量和烧结温度下，获得高致密且晶粒尺寸较低的氧化铟基靶材。使用该氧化铟基靶材镀膜得到TCO薄膜，具有高透光率和高载流子迁移率，可用于HJT电池，提高光电转化效率。
High-mobility indium oxide-based target material as well as preparation method and application thereof
一种高迁移率的氧化铟基靶材及其制备方法和应用
XU WEI (Autor:in) / GE CHUNQIAO (Autor:in) / CHEN LU (Autor:in) / GAO YUHANG (Autor:in)
08.11.2024
Patent
Elektronische Ressource
Chinesisch
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