Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Wafer support
A wafer support (28) is provided with: a base material (14) that contains at least boron nitride as a cuttable ceramic; a protective layer (16) that covers the surface (14a) of the base material (14); and a conductive member (18) that is at least partially enclosed in the base material (14). The base material (14) has a first layer (14b) and a second layer (14c) disposed between the first layer (14b) and the protective layer (16). The protective layer (16) is made of a material that causes less corrosion by plasma than the base material (14). When the ratio of the boron nitride contained in the first layer 14b is W1 [mass%] and the ratio of the boron nitride contained in the second layer 14c is W2 [mass%], the following formula (1) is satisfied: 5 < = W1-W2 < = 35 (1).
晶圆支承体28具备：至少含有氮化硼作为可切削陶瓷的基材14、覆盖基材14的表面14a的保护层16、以及至少一部分内包于基材14的导电构件18。基材14具有第一层14b、以及配置在第一层14b与保护层16之间的第二层14c。保护层16由等离子体所造成的腐蚀比基材14少的材料构成。将第一层14b中包含的氮化硼的比例设为W1[质量％]，将第二层14c中包含的氮化硼的比例设为W2[质量％]时，满足下述式(1)：5≤W1‑W2≤35…(1)。
Wafer support
A wafer support (28) is provided with: a base material (14) that contains at least boron nitride as a cuttable ceramic; a protective layer (16) that covers the surface (14a) of the base material (14); and a conductive member (18) that is at least partially enclosed in the base material (14). The base material (14) has a first layer (14b) and a second layer (14c) disposed between the first layer (14b) and the protective layer (16). The protective layer (16) is made of a material that causes less corrosion by plasma than the base material (14). When the ratio of the boron nitride contained in the first layer 14b is W1 [mass%] and the ratio of the boron nitride contained in the second layer 14c is W2 [mass%], the following formula (1) is satisfied: 5 < = W1-W2 < = 35 (1).
晶圆支承体28具备：至少含有氮化硼作为可切削陶瓷的基材14、覆盖基材14的表面14a的保护层16、以及至少一部分内包于基材14的导电构件18。基材14具有第一层14b、以及配置在第一层14b与保护层16之间的第二层14c。保护层16由等离子体所造成的腐蚀比基材14少的材料构成。将第一层14b中包含的氮化硼的比例设为W1[质量％]，将第二层14c中包含的氮化硼的比例设为W2[质量％]时，满足下述式(1)：5≤W1‑W2≤35…(1)。
Wafer support
晶圆支承体
YAMAGISHI WATARU (Autor:in) / MORI KAZUMASA (Autor:in) / KOUNO HITOSHI (Autor:in) / ETO SHUNICHI (Autor:in)
20.12.2024
Patent
Elektronische Ressource
Chinesisch
WAFER SUPPORT AND METHOD FOR MANUFACTURING WAFER SUPPORT
| Europäisches Patentamt | 2020