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WAFER SUPPORT
To provide a novel wafer support which is excellent in corrosion resistance against plasma.SOLUTION: A wafer support 28 comprises: a base material 14 which is made of machinable ceramic; an intermediate layer 15 covering a surface of the base material; a protective layer 16 covering a surface of the intermediate layer; and a conductive member 18 at least part of which is included in the base material. The intermediate layer 15 is made of a metallic material or an alloy material whose melting point is 800°C or higher. The protective layer 16 is made of a material which is less corroded by plasma than the base material 14 is.SELECTED DRAWING: Figure 5
【課題】プラズマに対する耐食性に優れた新たなウエハ支持体を提供する。【解決手段】ウエハ支持体28は、マシナブルセラミックスからなる基材14と、基材の表面を覆う中間層15と、中間層の表面を覆う保護層16と、基材に少なくとも一部が内包された導電部材18と、を備える。中間層15は、融点が800℃以上の金属材料または合金材料で構成されており、保護層16は、基材14よりもプラズマによる腐食が少ない材料で構成されている。【選択図】図5
WAFER SUPPORT
To provide a novel wafer support which is excellent in corrosion resistance against plasma.SOLUTION: A wafer support 28 comprises: a base material 14 which is made of machinable ceramic; an intermediate layer 15 covering a surface of the base material; a protective layer 16 covering a surface of the intermediate layer; and a conductive member 18 at least part of which is included in the base material. The intermediate layer 15 is made of a metallic material or an alloy material whose melting point is 800°C or higher. The protective layer 16 is made of a material which is less corroded by plasma than the base material 14 is.SELECTED DRAWING: Figure 5
【課題】プラズマに対する耐食性に優れた新たなウエハ支持体を提供する。【解決手段】ウエハ支持体28は、マシナブルセラミックスからなる基材14と、基材の表面を覆う中間層15と、中間層の表面を覆う保護層16と、基材に少なくとも一部が内包された導電部材18と、を備える。中間層15は、融点が800℃以上の金属材料または合金材料で構成されており、保護層16は、基材14よりもプラズマによる腐食が少ない材料で構成されている。【選択図】図5
WAFER SUPPORT
ウエハ支持体
YAMAGISHI KO (Autor:in) / MORI KAZUMASA (Autor:in) / KONO HITOSHI (Autor:in) / ETO SHUNICHI (Autor:in)
01.12.2023
Patent
Elektronische Ressource
Japanisch
WAFER SUPPORT AND METHOD FOR MANUFACTURING WAFER SUPPORT
Europäisches Patentamt | 2020
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