Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
COPPER/CERAMIC BONDED BODY, INSULATING CIRCUIT BOARD, MANUFACTURING METHOD OF COPPER/CERAMIC BONDED BODY, AND MANUFACTURING METHOD OF INSULATING CIRCUIT BOARD
To provide a copper/ceramic bonded body, an insulating circuit board, a method for manufacturing the copper/ceramic bonded body, and a method for manufacturing the insulating circuit board, which can suppress the occurrence of cracks at a bonded interface between a ceramic member and a copper member even when a severe cold cycle is applied, and are excellent in cold cycle reliability.SOLUTION: In a copper/ceramic bonded body 10 formed by bonding a copper member 12 composed of copper or a copper alloy to a ceramic member 11, a Cu-Mg intermetallic compound phase 45 composed of an intermetallic compound containing Cu and Mg is formed between the ceramic member 11 and the copper member 12. The maximum thickness of a region of the Cu-Mg intermetallic compound phase 45 in contact with the ceramic member 11 is 20 μm or less.SELECTED DRAWING: Figure 2
【課題】厳しい冷熱サイクルを負荷した場合であっても、セラミックス部材と銅部材との接合界面におけるクラックの発生を抑制でき、冷熱サイクル信頼性に優れた銅／セラミックス接合体、絶縁回路基板、及び、銅／セラミックス接合体の製造方法、絶縁回路基板の製造方法を提供する。【解決手段】銅又は銅合金からなる銅部材１２と、セラミックス部材１１とが接合されてなる銅／セラミックス接合体１０であって、セラミックス部材１１と銅部材１２との間には、ＣｕとＭｇを含む金属間化合物からなるＣｕ−Ｍｇ金属間化合物相４５が形成されており、Ｃｕ−Ｍｇ金属間化合物相４５のうちセラミックス部材１１に接した領域の最大厚さが２０μｍ以下とされている。【選択図】図２
COPPER/CERAMIC BONDED BODY, INSULATING CIRCUIT BOARD, MANUFACTURING METHOD OF COPPER/CERAMIC BONDED BODY, AND MANUFACTURING METHOD OF INSULATING CIRCUIT BOARD
To provide a copper/ceramic bonded body, an insulating circuit board, a method for manufacturing the copper/ceramic bonded body, and a method for manufacturing the insulating circuit board, which can suppress the occurrence of cracks at a bonded interface between a ceramic member and a copper member even when a severe cold cycle is applied, and are excellent in cold cycle reliability.SOLUTION: In a copper/ceramic bonded body 10 formed by bonding a copper member 12 composed of copper or a copper alloy to a ceramic member 11, a Cu-Mg intermetallic compound phase 45 composed of an intermetallic compound containing Cu and Mg is formed between the ceramic member 11 and the copper member 12. The maximum thickness of a region of the Cu-Mg intermetallic compound phase 45 in contact with the ceramic member 11 is 20 μm or less.SELECTED DRAWING: Figure 2
【課題】厳しい冷熱サイクルを負荷した場合であっても、セラミックス部材と銅部材との接合界面におけるクラックの発生を抑制でき、冷熱サイクル信頼性に優れた銅／セラミックス接合体、絶縁回路基板、及び、銅／セラミックス接合体の製造方法、絶縁回路基板の製造方法を提供する。【解決手段】銅又は銅合金からなる銅部材１２と、セラミックス部材１１とが接合されてなる銅／セラミックス接合体１０であって、セラミックス部材１１と銅部材１２との間には、ＣｕとＭｇを含む金属間化合物からなるＣｕ−Ｍｇ金属間化合物相４５が形成されており、Ｃｕ−Ｍｇ金属間化合物相４５のうちセラミックス部材１１に接した領域の最大厚さが２０μｍ以下とされている。【選択図】図２
COPPER/CERAMIC BONDED BODY, INSULATING CIRCUIT BOARD, MANUFACTURING METHOD OF COPPER/CERAMIC BONDED BODY, AND MANUFACTURING METHOD OF INSULATING CIRCUIT BOARD
銅／セラミックス接合体、絶縁回路基板、及び、銅／セラミックス接合体の製造方法、絶縁回路基板の製造方法
TERASAKI NOBUYUKI (Autor:in)
08.07.2021
Patent
Elektronische Ressource
Japanisch
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