A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
On epitaxial Si~1~-~xGe~x thin film growth by chemical vapour deposition from a silane, germane, hydrogen chloride and hydrogen gas mixture
On epitaxial Si~1~-~xGe~x thin film growth by chemical vapour deposition from a silane, germane, hydrogen chloride and hydrogen gas mixture
On epitaxial Si~1~-~xGe~x thin film growth by chemical vapour deposition from a silane, germane, hydrogen chloride and hydrogen gas mixture
Kuehne, H. (author) / Morgenstern, T. (author) / Zaumseil, P. (author) / Krueger, D. (author)
1993-01-01
251 pages
Article (Journal)
Unknown
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Growth of epitaxial germanium-silicon heterostructures by chemical vapour deposition
| British Library Online Contents | 1993
| British Library Online Contents | 1993
| British Library Online Contents | 1999
Low-pressure chemical vapour deposition growth of epitaxial silicon selective to silicon nitride
| British Library Online Contents | 2002
Growth of High Quality AlN Epitaxial Films by Hot-Wall Chemical Vapour Deposition
| British Library Online Contents | 1998