Defect production and annealing in ion implanted silicon carbide: Fid-Bau Portal

Defect production and annealing in ion implanted silicon carbide

Heft, A. / Wendler, E. / Bachmann, T. / Glaser, E.

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Defect production and annealing in ion implanted silicon carbide

Heft, A. / Wendler, E. / Bachmann, T. / Glaser, E.

Defect production and annealing in ion implanted silicon carbide

Heft, A. / Wendler, E. / Bachmann, T. / Glaser, E.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Defect production and annealing in ion implanted silicon carbide

Contributors:

Heft, A. (author) / Wendler, E. (author) / Bachmann, T. (author) / Glaser, E. (author) / Fricke, K. / Krozer, V.

Published in:

High Temperature Electronics: Materials Devices Applications ; 142

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 29

Publication date:

1995-01-01

Size:

142 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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