Effect of Hot Isostatic Press Annealing for Ion-Implanted Silicon Carbide: Fid-Bau Portal

Effect of Hot Isostatic Press Annealing for Ion-Implanted Silicon Carbide

Hirabayashi, Y. / Furuya, M. / Hirai, K. / Takano, H. / Yabuta, K. / Kumagai, M.

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Effect of Hot Isostatic Press Annealing for Ion-Implanted Silicon Carbide

Hirabayashi, Y. / Furuya, M. / Hirai, K. / Takano, H. / Yabuta, K. / Kumagai, M.

Effect of Hot Isostatic Press Annealing for Ion-Implanted Silicon Carbide

Hirabayashi, Y. / Furuya, M. / Hirai, K. / Takano, H. / Yabuta, K. / Kumagai, M.

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Title:

Effect of Hot Isostatic Press Annealing for Ion-Implanted Silicon Carbide

Contributors:

Hirabayashi, Y. (author) / Furuya, M. (author) / Hirai, K. (author) / Takano, H. (author) / Yabuta, K. (author) / Kumagai, M. (author)

Published in:

MATERIALS SCIENCE FORUM ; 264/268 ; 749-752

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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