Secondary Defects and Deep Levels in N-Si Induced By High Energy P Ion Implantation: Fid-Bau Portal

Secondary Defects and Deep Levels in N-Si Induced By High Energy P Ion Implantation

Tatsukawa, S. / Nakahara, Y. / Matsumoto, S.

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Secondary Defects and Deep Levels in N-Si Induced By High Energy P Ion Implantation

Tatsukawa, S. / Nakahara, Y. / Matsumoto, S.

Secondary Defects and Deep Levels in N-Si Induced By High Energy P Ion Implantation

Tatsukawa, S. / Nakahara, Y. / Matsumoto, S.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Secondary Defects and Deep Levels in N-Si Induced By High Energy P Ion Implantation

Contributors:

Tatsukawa, S. (author) / Nakahara, Y. (author) / Matsumoto, S. (author)

Published in:

MATERIALS SCIENCE FORUM ; 1875-1880

Publication date:

1995-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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