Deep Defects in 3C-SiC Generated by H^+- and He^+-Implantation or by Irradiation with High-Energy Electrons: Fid-Bau Portal

Deep Defects in 3C-SiC Generated by H^+- and He^+-Implantation or by Irradiation with High-Energy Electrons

Weidner, M. / Trapaidze, L. / Pensl, G. / Reshanov, S.A. / Schoner, A. / Itoh, H. / Ohshima, T. / Kimoto, T.

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Deep Defects in 3C-SiC Generated by H^+- and He^+-Implantation or by Irradiation with High-Energy Electrons

Weidner, M. / Trapaidze, L. / Pensl, G. / Reshanov, S.A. / Schoner, A. / Itoh, H. / Ohshima, T. / Kimoto, T.

Deep Defects in 3C-SiC Generated by H^+- and He^+-Implantation or by Irradiation with High-Energy Electrons

Weidner, M. / Trapaidze, L. / Pensl, G. / Reshanov, S.A. / Schoner, A. / Itoh, H. / Ohshima, T. / Kimoto, T.

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Title:

Deep Defects in 3C-SiC Generated by H^+- and He^+-Implantation or by Irradiation with High-Energy Electrons

Contributors:

Weidner, M. (author) / Trapaidze, L. (author) / Pensl, G. (author) / Reshanov, S.A. (author) / Schoner, A. (author) / Itoh, H. (author) / Ohshima, T. (author) / Kimoto, T. (author) / Bauer, A.J. / Friedrichs, P.

Published in:

Silicon Carbide and Related Materials 2009 ; 439-442

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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