Implantation Temperature Dependent Deep Level Defects in 4H-SiC

Aberg, D. / Storasta, L. / Hallen, A. et al. | British Library Online Contents | 2001

Ion implantation induced defects in epitaxial 4H-SiC

Hallen, A. / Henry, A. / Pellegrino, P. et al. | British Library Online Contents | 1999

Deep Defects in 3C-SiC Generated by H^+- and He^+-Implantation or by Irradiation with High-Energy Electrons

Weidner, M. / Trapaidze, L. / Pensl, G. et al. | British Library Online Contents | 2010

Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)

Ono, R. / Fujimaki, M. / Senzaki, J. et al. | British Library Online Contents | 2002

Boron diffusion in presence of defects induced by helium implantation

Cayrel, F. / Alquier, D. / Dubois, C. et al. | British Library Online Contents | 2005