Defect Property in He^+ Implanted Silicon Probed by Slow Positron Beam

Zhou, X. Y. / Zhang, T. H. / Zhang, X. F. et al. | British Library Online Contents | 2001

Depth profiling of defects in nitrogen implanted silicon using a slow positron beam

Taylor, J.W. / Saleh, A.S. / Rice-Evans, P.C. et al. | British Library Online Contents | 1999

Positron Beam Study of Defects Induced in Ar-Implanted Si

Miyagoe, T. / Fujinami, M. / Sawada, T. et al. | British Library Online Contents | 2004

Structural defects in SiO2/SiC interface probed by a slow positron beam

Maekawa, M. / Kawasuso, A. / Chen, Z. Q. et al. | British Library Online Contents | 2005

Vacancy-Type Defects in SrTiO~3 Probed by a Monoenergetic Positron Beam

Uedono, A. / Kiyohara, M. / Shimoyama, K. et al. | British Library Online Contents | 2004