Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors

Meyer, D. J. / Bohna, N. A. / Lenahan, P. M. et al. | British Library Online Contents | 2004

Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

Yoshikawa, M. / Satoh, M. / Ohshima, T. et al. | British Library Online Contents | 2002

Metal-Nitride-Semiconductor Capacitors on 6H-SiC

Berberich, S. / Godignon, P. / Millan, J. et al. | British Library Online Contents | 1998

Silicon carbide and preparation method thereof, silicon carbide ceramic and semiconductor device

HE PENGBO / LI YALIN | Europäisches Patentamt | 2024

Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors

Meyer, D. J. / Dautrich, M. S. / Lenahan, P. M. et al. | British Library Online Contents | 2005