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    Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs

    New search for: Ohshima, T.
    New search for: Yoshikawa, M.
    New search for: Itoh, H.
    New search for: Kojima, K.
    New search for: Okada, S.
    New search for: Nashiyama, I.

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    Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs

    New search for: Ohshima, T.
    New search for: Yoshikawa, M.
    New search for: Itoh, H.
    New search for: Kojima, K.
    New search for: Okada, S.
    New search for: Nashiyama, I.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs

    New search for: Ohshima, T.
    New search for: Yoshikawa, M.
    New search for: Itoh, H.
    New search for: Kojima, K.
    New search for: Okada, S.
    New search for: Nashiyama, I.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs

    Contributors:

    Ohshima, T. (author) / Yoshikawa, M. (author) / Itoh, H. (author) / Kojima, K. (author) / Okada, S. (author) / Nashiyama, I. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 338/342 ; 1299-1302

    Publication date:

    2000-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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