A platform for research: civil engineering, architecture and urbanism
Effect of Substrates Thermal Etching on CVD Growth of Epitaxial Silicon Carbide Layers
Effect of Substrates Thermal Etching on CVD Growth of Epitaxial Silicon Carbide Layers
Effect of Substrates Thermal Etching on CVD Growth of Epitaxial Silicon Carbide Layers
Strupinski, W. (author) / Kosciewicz, K. (author) / Weyher, J. (author) / Olszyna, A. (author)
MATERIALS SCIENCE FORUM ; 600/603 ; 155-158
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2001
|British Library Online Contents | 2000
|Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers
British Library Online Contents | 2003
|Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process
British Library Online Contents | 2000
|Thermal Oxidation of Silicon Carbide Substrates
British Library Online Contents | 2009
|