Growth of high quality silicon carbide films on Si by triode plasma CVD using monomethylsilane

Yasui, K. / Asada, K. / Maeda, T. et al. | British Library Online Contents | 2001

Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas

Habuka, H. / Tsuji, M. / Ando, Y. | British Library Online Contents | 2013

Temperature-dependent carbon incorporation into the Si1-yCy film during gas-source molecular beam epitaxy using monomethylsilane

Konno, A. / Senthil, K. / Murata, T. et al. | British Library Online Contents | 2006

Monomethylsilane as a New Dopant Precursor for n-Type GaN Grown by MOVPE

Tomita, K. / Itoh, K. / Kachi, T. et al. | British Library Online Contents | 1998

Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy

Sambonsuge, S. / Saito, E. / Jung, M.H. et al. | British Library Online Contents | 2013