Channeling Measurements of Ion Implantation Damage in 4H-SiC: Fid-Bau Portal

Channeling Measurements of Ion Implantation Damage in 4H-SiC

Kuznetsov, A. Y. / Janson, M. S. / Hallen, A. / Svensson, B. G. / Jagadish, C. / Grunleitner, H. / Pensl, G.

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Channeling Measurements of Ion Implantation Damage in 4H-SiC

Kuznetsov, A. Y. / Janson, M. S. / Hallen, A. / Svensson, B. G. / Jagadish, C. / Grunleitner, H. / Pensl, G.

Channeling Measurements of Ion Implantation Damage in 4H-SiC

Kuznetsov, A. Y. / Janson, M. S. / Hallen, A. / Svensson, B. G. / Jagadish, C. / Grunleitner, H. / Pensl, G.

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Document information

Title:

Channeling Measurements of Ion Implantation Damage in 4H-SiC

Contributors:

Kuznetsov, A. Y. (author) / Janson, M. S. (author) / Hallen, A. (author) / Svensson, B. G. (author) / Jagadish, C. (author) / Grunleitner, H. (author) / Pensl, G. (author)

Published in:

MATERIALS SCIENCE FORUM ; 353/356 ; 595-598

Publication date:

2001-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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