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    Modeling electromigration and the void nucleation in thin-film interconnects of integrated circuits

    New search for: Goldstein, R. V.
    New search for: Sarychev, M. E.
    New search for: Shirabaikin, D. B.
    New search for: Vladimirov, A. S.
    New search for: Zhitnikov, Y. V.

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    Modeling electromigration and the void nucleation in thin-film interconnects of integrated circuits

    New search for: Goldstein, R. V.
    New search for: Sarychev, M. E.
    New search for: Shirabaikin, D. B.
    New search for: Vladimirov, A. S.
    New search for: Zhitnikov, Y. V.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Modeling electromigration and the void nucleation in thin-film interconnects of integrated circuits

    New search for: Goldstein, R. V.
    New search for: Sarychev, M. E.
    New search for: Shirabaikin, D. B.
    New search for: Vladimirov, A. S.
    New search for: Zhitnikov, Y. V.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
    Title:

    Modeling electromigration and the void nucleation in thin-film interconnects of integrated circuits

    Contributors:

    Goldstein, R. V. (author) / Sarychev, M. E. (author) / Shirabaikin, D. B. (author) / Vladimirov, A. S. (author) / Zhitnikov, Y. V. (author)

    Published in:

    INTERNATIONAL JOURNAL OF FRACTURE ; 109 ; 91-121

    Publication date:

    2001-01-01

    Size:

    31 pages

    ISSN:

    0376-9429

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.1126

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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