Fabrication and characterization of GaAs MIS devices with N-rich PECVD SixNy dielectric: Fid-Bau Portal

Fabrication and characterization of GaAs MIS devices with N-rich PECVD SixNy dielectric

Pal, S. / Bose, D. N.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Fabrication and characterization of GaAs MIS devices with N-rich PECVD SixNy dielectric

Pal, S. / Bose, D. N.

Fabrication and characterization of GaAs MIS devices with N-rich PECVD SixNy dielectric

Pal, S. / Bose, D. N.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Document information

Title:

Fabrication and characterization of GaAs MIS devices with N-rich PECVD SixNy dielectric

Contributors:

Pal, S. (author) / Bose, D. N. (author)

Published in:

APPLIED SURFACE SCIENCE ; 181 ; 179-184

Publication date:

2001-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

Gao, H. / Ikeda, K. i. / Hata, S. et al. | British Library Online Contents | 2010

Performance of thin AlxOy, SixNy and AlN passivation layers for high temperature SAW device applications

Gillinger, M. / Knobloch, T. / Marković, A. et al. | British Library Online Contents | 2018

Fabrication of PECVD-silicon oxynitride-based optical waveguides

Alayo, M. I. / Criado, D. / Carreno, M. N. et al. | British Library Online Contents | 2004

Vibrational spectroscopy characterization of low-dielectric constant SiOC:H films prepared by PECVD technique

Das, G. / Mariotto, G. / Quaranta, A. | British Library Online Contents | 2004

Characterization of PECVD boron carbonitride layers

Thamm, T. / Korner, K. U. / Bohne, W. et al. | British Library Online Contents | 2005