Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide

    New search for: Latt, K. M.
    New search for: Lee, Y. K.
    New search for: Seng, H. L.
    New search for: Osipowicz, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide

    New search for: Latt, K. M.
    New search for: Lee, Y. K.
    New search for: Seng, H. L.
    New search for: Osipowicz, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide

    New search for: Latt, K. M.
    New search for: Lee, Y. K.
    New search for: Seng, H. L.
    New search for: Osipowicz, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide

    Contributors:

    Latt, K. M. (author) / Lee, Y. K. (author) / Seng, H. L. (author) / Osipowicz, T. (author)

    Published in:

    JOURNAL OF MATERIALS SCIENCE ; 36 ; 5845-5852

    Publication date:

    2001-01-01

    Size:

    8 pages

    ISSN:

    0022-2461

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Study of diffusion barrier properties of ionized metal plasma (IMP) deposited tantalum (Ta) between Cu and SiO"2

    Lee, Y.K. / Maung Latt, K. / JaeHyung, K. et al. | British Library Online Contents | 1999

    Behaviour of ionized metal plasma deposited Ta diffusion barrier between Cu and SiO2

    Maung Latt, K. / Park, H. S. / Li, S. et al. | British Library Online Contents | 2002

    Study of diffusion barrier properties of ionized metal plasma (IMP) deposited TaN between Cu and SiO2

    Lee, Y. K. / Maung Latt, K. / Jaehyung, K. et al. | British Library Online Contents | 2000

    Barrier behaviour of plasma deposited silicon oxide and nitride against Cu diffusion

    Vogt, M. / Drescher, K. | British Library Online Contents | 1996

    Sputter Deposition of Tantalum-Nitride Films on Copper Using an RF-Plasma

    Walter, K. C. / Fetherston, R. P. / Sridharan, K. et al. | British Library Online Contents | 1994

    Back to top