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Study of diffusion barrier properties of ionized metal plasma (IMP) deposited tantalum (Ta) between Cu and SiO"2
Study of diffusion barrier properties of ionized metal plasma (IMP) deposited tantalum (Ta) between Cu and SiO"2
Study of diffusion barrier properties of ionized metal plasma (IMP) deposited tantalum (Ta) between Cu and SiO"2
Lee, Y.K. (author) / Maung Latt, K. (author) / JaeHyung, K. (author) / Osipowicz, T. (author) / Lee, K. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 68 ; 99 - 103
1999-01-01
5 pages
Article (Journal)
English
DDC:
620.11
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British Library Online Contents | 2001
|British Library Online Contents | 2000
|Behaviour of ionized metal plasma deposited Ta diffusion barrier between Cu and SiO2
British Library Online Contents | 2002
|British Library Online Contents | 2000
|British Library Online Contents | 2000
|