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    Study of diffusion barrier properties of ionized metal plasma (IMP) deposited TaN between Cu and SiO2

    New search for: Lee, Y. K.
    New search for: Maung Latt, K.
    New search for: Jaehyung, K.
    New search for: Lee, K.

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    Study of diffusion barrier properties of ionized metal plasma (IMP) deposited TaN between Cu and SiO2

    New search for: Lee, Y. K.
    New search for: Maung Latt, K.
    New search for: Jaehyung, K.
    New search for: Lee, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Study of diffusion barrier properties of ionized metal plasma (IMP) deposited TaN between Cu and SiO2

    New search for: Lee, Y. K.
    New search for: Maung Latt, K.
    New search for: Jaehyung, K.
    New search for: Lee, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Study of diffusion barrier properties of ionized metal plasma (IMP) deposited TaN between Cu and SiO2

    Contributors:

    Lee, Y. K. (author) / Maung Latt, K. (author) / Jaehyung, K. (author) / Lee, K. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 3 ; 179-184

    Publication date:

    2000-01-01

    Size:

    6 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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