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Behaviour of ionized metal plasma deposited Ta diffusion barrier between Cu and SiO2
Behaviour of ionized metal plasma deposited Ta diffusion barrier between Cu and SiO2
Behaviour of ionized metal plasma deposited Ta diffusion barrier between Cu and SiO2
Maung Latt, K. (author) / Park, H. S. (author) / Li, S. (author) / Rong, L. (author) / Osipowicz, T. (author) / Zhu, W. G. (author) / Lee, Y. K. (author)
JOURNAL OF MATERIALS SCIENCE ; 37 ; 1941-1949
2002-01-01
9 pages
Article (Journal)
English
DDC:
620.11
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