A platform for research: civil engineering, architecture and urbanism
A novel atomic doping technology for ultra-shallow junction of SOI-MOSFETs
A novel atomic doping technology for ultra-shallow junction of SOI-MOSFETs
A novel atomic doping technology for ultra-shallow junction of SOI-MOSFETs
Koh, K. W. (author) / Oh, H. J. (author) / Choi, H. (author) / Kurino, H. (author) / Koyanagi, M. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 435 - 438
2002-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si1-xGex CVD
British Library Online Contents | 2002
|Shallow junction doping technologies for ULSI
British Library Online Contents | 1998
|Ultra-Shallow Junction Formation Using Rapid Thermal Processing
British Library Online Contents | 2008
|British Library Online Contents | 2005
|Ultra-shallow junctions produced by plasma doping and flash lamp annealing
British Library Online Contents | 2004
|