Fabrication of a strained is on sub-10-nm-thick SiGe-on-insulator virtual substrate: Fid-Bau Portal

Fabrication of a strained is on sub-10-nm-thick SiGe-on-insulator virtual substrate

Tezuka, T. / Sugiyama, N. / Takagi, S.

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Fabrication of a strained is on sub-10-nm-thick SiGe-on-insulator virtual substrate

Tezuka, T. / Sugiyama, N. / Takagi, S.

Fabrication of a strained is on sub-10-nm-thick SiGe-on-insulator virtual substrate

Tezuka, T. / Sugiyama, N. / Takagi, S.

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Order at Subito €

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Document information

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Document information

Title:

Fabrication of a strained is on sub-10-nm-thick SiGe-on-insulator virtual substrate

Contributors:

Tezuka, T. (author) / Sugiyama, N. (author) / Takagi, S. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 360 - 363

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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