Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching: Fid-Bau Portal

Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching

Kao, C. C. / Huang, H. W. / Tsai, J. Y. / Yu, C. C. / Lin, C. F. / Kuo, H. C. / Wang, S. C.

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Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching

Kao, C. C. / Huang, H. W. / Tsai, J. Y. / Yu, C. C. / Lin, C. F. / Kuo, H. C. / Wang, S. C.

Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching

Kao, C. C. / Huang, H. W. / Tsai, J. Y. / Yu, C. C. / Lin, C. F. / Kuo, H. C. / Wang, S. C.

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Title:

Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching

Contributors:

Kao, C. C. (author) / Huang, H. W. (author) / Tsai, J. Y. (author) / Yu, C. C. (author) / Lin, C. F. (author) / Kuo, H. C. (author) / Wang, S. C. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 107 ; 283-288

Publication date:

2004-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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