4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106: Fid-Bau Portal

4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106

Mauceri, M. / Pecora, A. / Litrico, G. / Vecchio, C. / Puglisi, M. / Crippa, D. / Piluso, N. / Camarda, M. / La Via, F.

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4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106

Mauceri, M. / Pecora, A. / Litrico, G. / Vecchio, C. / Puglisi, M. / Crippa, D. / Piluso, N. / Camarda, M. / La Via, F.

4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106

Mauceri, M. / Pecora, A. / Litrico, G. / Vecchio, C. / Puglisi, M. / Crippa, D. / Piluso, N. / Camarda, M. / La Via, F.

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Title:

4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106

Contributors:

Mauceri, M. (author) / Pecora, A. (author) / Litrico, G. (author) / Vecchio, C. (author) / Puglisi, M. (author) / Crippa, D. (author) / Piluso, N. (author) / Camarda, M. (author) / La Via, F. (author) / Okumura, H.

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 121-124

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Schoner, A. / Konstantinov, A. / Karlsson, S. et al. | British Library Online Contents | 2002

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Burk, A. A. / O Loughlin, M. J. / Paisley, M. J. et al. | British Library Online Contents | 2005

Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor

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