Boron and phosphorous diffusion in ion-beam-sputtering deposited SiGe films: Fid-Bau Portal

Boron and phosphorous diffusion in ion-beam-sputtering deposited SiGe films

Ru, G. P. / Qu, X. P. / Gu, Q. / Qi, W. J. / Li, B. Z.

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Boron and phosphorous diffusion in ion-beam-sputtering deposited SiGe films

Ru, G. P. / Qu, X. P. / Gu, Q. / Qi, W. J. / Li, B. Z.

Boron and phosphorous diffusion in ion-beam-sputtering deposited SiGe films

Ru, G. P. / Qu, X. P. / Gu, Q. / Qi, W. J. / Li, B. Z.

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Order at Subito €

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Document information

Title:

Boron and phosphorous diffusion in ion-beam-sputtering deposited SiGe films

Contributors:

Ru, G. P. (author) / Qu, X. P. (author) / Gu, Q. (author) / Qi, W. J. (author) / Li, B. Z. (author)

Published in:

MATERIALS LETTERS ; 57 ; 921-924

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0167-577X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1105 / 530

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