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Inductively coupled plasma etching of GaN using Cl2/He gases

Lin, Y. C. / Chang, S. J. / Su, Y. K. / Shei, S. C. / Hsu, S. J.

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Inductively coupled plasma etching of GaN using Cl2/He gases

Lin, Y. C. / Chang, S. J. / Su, Y. K. / Shei, S. C. / Hsu, S. J.

Inductively coupled plasma etching of GaN using Cl2/He gases

Lin, Y. C. / Chang, S. J. / Su, Y. K. / Shei, S. C. / Hsu, S. J.

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Check availability in my library

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Document information

Title:

Inductively coupled plasma etching of GaN using Cl2/He gases

Contributors:

Lin, Y. C. (author) / Chang, S. J. (author) / Su, Y. K. (author) / Shei, S. C. (author) / Hsu, S. J. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 98 ; 60-64

Publication date:

2003-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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