Long-pulse duration excimer laser annealing of Al+ ion implanted 4H-SiC for pn junction formation: Fid-Bau Portal

Long-pulse duration excimer laser annealing of Al+ ion implanted 4H-SiC for pn junction formation

Dutto, C. / Fogarassy, E. / Mathiot, D. / Muller, D. / Kern, P. / Ballutaud, D.

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Long-pulse duration excimer laser annealing of Al+ ion implanted 4H-SiC for pn junction formation

Dutto, C. / Fogarassy, E. / Mathiot, D. / Muller, D. / Kern, P. / Ballutaud, D.

Long-pulse duration excimer laser annealing of Al+ ion implanted 4H-SiC for pn junction formation

Dutto, C. / Fogarassy, E. / Mathiot, D. / Muller, D. / Kern, P. / Ballutaud, D.

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Check availability in my library

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Document information

Title:

Long-pulse duration excimer laser annealing of Al+ ion implanted 4H-SiC for pn junction formation

Contributors:

Dutto, C. (author) / Fogarassy, E. (author) / Mathiot, D. (author) / Muller, D. (author) / Kern, P. (author) / Ballutaud, D. (author)

Published in:

APPLIED SURFACE SCIENCE ; 208/209 ; 292-297

Publication date:

2003-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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