Si c(4x4) structure appeared in the initial stage of 3C-SiC epitaxial growth on Si(0 0 1) using monomethylsilane and dimethylsilane

Narita, Y. / Inubushi, T. / Yasui, K. et al. | British Library Online Contents | 2003

Growth of high quality silicon carbide films on Si by triode plasma CVD using monomethylsilane

Yasui, K. / Asada, K. / Maeda, T. et al. | British Library Online Contents | 2001

Monomethylsilane as a New Dopant Precursor for n-Type GaN Grown by MOVPE

Tomita, K. / Itoh, K. / Kachi, T. et al. | British Library Online Contents | 1998

Heteroepitaxial growth of 3C-SiC film on Si(100) substrate by plasma chemical vapor deposition using monomethylsilane

Morikawa, Y. / Hirai, M. / Ohi, A. et al. | British Library Online Contents | 2007

Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas

Habuka, H. / Tsuji, M. / Ando, Y. | British Library Online Contents | 2013