Direct observations of heteroepitaxial diamond on a silicon(110) substrate by microwave plasma chemical vapor deposition

Chen, C. J. / Chang, L. / Lin, T. S. et al. | British Library Online Contents | 1996

Growth of high quality silicon carbide films on Si by triode plasma CVD using monomethylsilane

Yasui, K. / Asada, K. / Maeda, T. et al. | British Library Online Contents | 2001

Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas

Habuka, H. / Tsuji, M. / Ando, Y. | British Library Online Contents | 2013

Temperature-dependent carbon incorporation into the Si1-yCy film during gas-source molecular beam epitaxy using monomethylsilane

Konno, A. / Senthil, K. / Murata, T. et al. | British Library Online Contents | 2006

Initial stage of 3C-SiC growth on Si(0 0 1)-2 x 1 surface using monomethylsilane

Narita, Y. / Inubushi, T. / Harashima, M. et al. | British Library Online Contents | 2003