A platform for research: civil engineering, architecture and urbanism
Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers
Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers
Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers
Yakimova, R. (author) / Syvajarvi, M. (author) / Iakimov, T. (author) / Okunev, A. O. (author) / Udal tsov, V. E. (author) / Janzen, E. (author) / Bergman, P. / Janzen, E.
2003-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Epitaxial Graphenes on Silicon Carbide
British Library Online Contents | 2010
|Effect of Substrates Thermal Etching on CVD Growth of Epitaxial Silicon Carbide Layers
British Library Online Contents | 2009
|SEM Visibility of Stacking Faults in 4H-Silicon Carbide Epitaxial and Implanted Layers
British Library Online Contents | 2003
|Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers
British Library Online Contents | 2005
|Defect annealing in ion implanted silicon carbide
British Library Online Contents | 1997
|