Traps at the Interface of 3C-SiC/SiO~2-MOS-Structures: Fid-Bau Portal

Traps at the Interface of 3C-SiC/SiO~2-MOS-Structures

Ciobanu, F. / Pensl, G. / Nagasawa, H. / Schoner, A. / Dimitrijev, S. / Cheong, K.-Y. / Afanas ev, V. V. / Wagner, G.

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Traps at the Interface of 3C-SiC/SiO~2-MOS-Structures

Ciobanu, F. / Pensl, G. / Nagasawa, H. / Schoner, A. / Dimitrijev, S. / Cheong, K.-Y. / Afanas ev, V. V. / Wagner, G.

Traps at the Interface of 3C-SiC/SiO~2-MOS-Structures

Ciobanu, F. / Pensl, G. / Nagasawa, H. / Schoner, A. / Dimitrijev, S. / Cheong, K.-Y. / Afanas ev, V. V. / Wagner, G.

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Document information

Title:

Traps at the Interface of 3C-SiC/SiO~2-MOS-Structures

Contributors:

Ciobanu, F. (author) / Pensl, G. (author) / Nagasawa, H. (author) / Schoner, A. (author) / Dimitrijev, S. (author) / Cheong, K.-Y. (author) / Afanas ev, V. V. (author) / Wagner, G. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 551-554

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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