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Development of a new type of SiGe thin strain relaxed buffer based on the incorporation of a carbon-containing layer
Development of a new type of SiGe thin strain relaxed buffer based on the incorporation of a carbon-containing layer
Development of a new type of SiGe thin strain relaxed buffer based on the incorporation of a carbon-containing layer
Delhougne, R. (author) / Meunier-Beillard, P. (author) / Caymax, M. (author) / Loo, R. (author) / Vandervorst, W. (author)
APPLIED SURFACE SCIENCE ; 224 ; 91-94
2004-01-01
4 pages
Article (Journal)
English
DDC:
621.35
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