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Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient

Bera, L. K. / Mathew, S. / Balasubramanian, N. / Braithwaite, G. / Currie, M. T. / Singaporewala, F. / Yap, J. / Hammond, R. / Lochtefeld, A. / Bulsara, M. T.

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Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient

Bera, L. K. / Mathew, S. / Balasubramanian, N. / Braithwaite, G. / Currie, M. T. / Singaporewala, F. / Yap, J. / Hammond, R. / Lochtefeld, A. / Bulsara, M. T.

Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient

Bera, L. K. / Mathew, S. / Balasubramanian, N. / Braithwaite, G. / Currie, M. T. / Singaporewala, F. / Yap, J. / Hammond, R. / Lochtefeld, A. / Bulsara, M. T.

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Order at Subito €

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Title:

Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient

Contributors:

Bera, L. K. (author) / Mathew, S. (author) / Balasubramanian, N. (author) / Braithwaite, G. (author) / Currie, M. T. (author) / Singaporewala, F. (author) / Yap, J. (author) / Hammond, R. (author) / Lochtefeld, A. (author) / Bulsara, M. T. (author)

Published in:

APPLIED SURFACE SCIENCE ; 224 ; 278-282

Publication date:

2004-01-01

Size:

5 pages

ISSN:

Type of media:

Article (Journal)

Type of material:

Print

Language:

English

Classification:

© Metadata Copyright the British Library Board and other contributors. All rights reserved.

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