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A comparative analysis of thermal gate oxide on strained Si/relaxed SiGe layer for reliability prediction of strained Si MOSFETs
A comparative analysis of thermal gate oxide on strained Si/relaxed SiGe layer for reliability prediction of strained Si MOSFETs
A comparative analysis of thermal gate oxide on strained Si/relaxed SiGe layer for reliability prediction of strained Si MOSFETs
Lee, S. G. (author) / Kim, Y. P. (author) / Lee, H. L. (author) / Jin, B. J. (author) / Lee, J. W. (author) / Shin, Y. G. (author) / Choi, S. (author) / Chung, U. I. (author) / Moon, J. T. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 215-218
2005-01-01
4 pages
Article (Journal)
English
DDC:
621.38152
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