A comparative analysis of thermal gate oxide on strained Si/relaxed SiGe layer for reliability prediction of strained Si MOSFETs: Fid-Bau Portal

A comparative analysis of thermal gate oxide on strained Si/relaxed SiGe layer for reliability prediction of strained Si MOSFETs

Lee, S. G. / Kim, Y. P. / Lee, H. L. / Jin, B. J. / Lee, J. W. / Shin, Y. G. / Choi, S. / Chung, U. I. / Moon, J. T.

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A comparative analysis of thermal gate oxide on strained Si/relaxed SiGe layer for reliability prediction of strained Si MOSFETs

Lee, S. G. / Kim, Y. P. / Lee, H. L. / Jin, B. J. / Lee, J. W. / Shin, Y. G. / Choi, S. / Chung, U. I. / Moon, J. T.

A comparative analysis of thermal gate oxide on strained Si/relaxed SiGe layer for reliability prediction of strained Si MOSFETs

Lee, S. G. / Kim, Y. P. / Lee, H. L. / Jin, B. J. / Lee, J. W. / Shin, Y. G. / Choi, S. / Chung, U. I. / Moon, J. T.

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Document information

Title:

A comparative analysis of thermal gate oxide on strained Si/relaxed SiGe layer for reliability prediction of strained Si MOSFETs

Contributors:

Lee, S. G. (author) / Kim, Y. P. (author) / Lee, H. L. (author) / Jin, B. J. (author) / Lee, J. W. (author) / Shin, Y. G. (author) / Choi, S. (author) / Chung, U. I. (author) / Moon, J. T. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 215-218

Publication date:

2005-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

Wang, C. C. / Sheu, Y. M. / Liu, S. et al. | British Library Online Contents | 2005

Growth of high-quality relaxed SiGe films with an intermediate Si1-yCy layer for strained Si n-MOSFETs

Chen, P. S. / Lee, S. W. / Liao, K. F. | British Library Online Contents | 2006

Compressively strained Ge channels on relaxed SiGe buffer layers

Bollani, M. / Muller, E. / Signoretti, S. et al. | British Library Online Contents | 2003

Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices

Uppal, S. / Kanoun, M. / Varzgar, J. B. et al. | British Library Online Contents | 2006

Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures

Varzgar, J. B. / Kanoun, M. / Uppal, S. et al. | British Library Online Contents | 2006