Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy: Fid-Bau Portal

Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy

Narita, K. / Hijikata, Y. / Yaguchi, H. / Yoshida, S. / Senzaki, J. / Nakashima, S.

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Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy

Narita, K. / Hijikata, Y. / Yaguchi, H. / Yoshida, S. / Senzaki, J. / Nakashima, S.

Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy

Narita, K. / Hijikata, Y. / Yaguchi, H. / Yoshida, S. / Senzaki, J. / Nakashima, S.

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Title:

Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy

Contributors:

Narita, K. (author) / Hijikata, Y. (author) / Yaguchi, H. (author) / Yoshida, S. (author) / Senzaki, J. (author) / Nakashima, S. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 905-908

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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