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Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy
Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy
Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy
Narita, K. (author) / Hijikata, Y. (author) / Yaguchi, H. (author) / Yoshida, S. (author) / Senzaki, J. (author) / Nakashima, S. (author)
MATERIALS SCIENCE FORUM ; 457/460 ; 905-908
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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