A platform for research: civil engineering, architecture and urbanism
Low leakage and high performance of nMOSFET using SiGe layer as a diffusion barrier
Low leakage and high performance of nMOSFET using SiGe layer as a diffusion barrier
Low leakage and high performance of nMOSFET using SiGe layer as a diffusion barrier
Mheen, B. (author) / Song, Y. J. (author) / Kang, J. Y. (author) / Shim, K. H. (author) / Hong, S. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 7 ; 375-378
2004-01-01
4 pages
Article (Journal)
English
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
A DC-5 GHz NMOSFET SPDT T/R switch in 0.25-mm SiGe BiCMOS technology
British Library Online Contents | 2004
|Mechanisms of stress generation within a polysilicon gate for nMOSFET performance enhancement
British Library Online Contents | 2006
|British Library Online Contents | 2006
|Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability
British Library Online Contents | 2014
|